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Strong passivation effects on the properties of an InAs surface quantum dot hybrid structure

Identifieur interne : 000491 ( Main/Repository ); précédent : 000490; suivant : 000492

Strong passivation effects on the properties of an InAs surface quantum dot hybrid structure

Auteurs : RBID : Pascal:13-0133370

Descripteurs français

Pascal (Inist)
- Passivation, Arséniure d'indium, Semiconducteur III-V, Composé III-V, Point quantique, Nanomatériau, Couche superficielle, Couche enterrée, Photoluminescence, Résolution temporelle, Spectre résolution temporelle, Effet tunnel, Etat surface, Traitement surface, Modification chimique, Equation vitesse, Capteur, InAs, 8107T, 8107, 7855.

English descriptors

KwdEn :
- Buried layers, Chemical modification, III-V compound, III-V semiconductors, Indium arsenides, Nanostructured materials, Passivation, Photoluminescence, Quantum dots, Rate equation, Sensors, Surface layers, Surface states, Surface treatments, Time resolution, Time resolved spectra, Tunnel effect.

Abstract

We report on an InAs quantum dot (QD) hybrid structure with a top surface QD layer coupled to two buried QD layers that is highly sensitive to surface passivation. After 180 min of passivation, the photoluminescence (PL) peak of the surface QDs shifts from 1545 to 1275 nm while its intensity decreases by one order of magnitude. Time-resolved PL reveals a significant decrease of carrier tunneling between the QD layers because of the surface state modification by chemical treatment. A simple model with rate equations is used to explain the observed optical performance. Our results show that the optical performance of this hybrid structure is very sensitive to the surface environment, making it a potential candidate for sensing applications.

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Pascal:13-0133370

Le document en format XML

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<author><name sortKey="Lin, A" uniqKey="Lin A">A. Lin</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>California NanoSystems Institute and Electrical Engineering Department, University of California at Los Angeles</s1>
<s2>Los Angeles, CA 90095</s2>
<s3>USA</s3>
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<country>États-Unis</country>
<wicri:noRegion>Los Angeles, CA 90095</wicri:noRegion>
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<author><name sortKey="Liang, B L" uniqKey="Liang B">B. L. Liang</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>California NanoSystems Institute and Electrical Engineering Department, University of California at Los Angeles</s1>
<s2>Los Angeles, CA 90095</s2>
<s3>USA</s3>
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<country>États-Unis</country>
<wicri:noRegion>Los Angeles, CA 90095</wicri:noRegion>
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<author><name sortKey="Dorogan, V G" uniqKey="Dorogan V">V. G. Dorogan</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Physics Department, University of Arkansas</s1>
<s2>Fayetteville, AR 72701</s2>
<s3>USA</s3>
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<country>États-Unis</country>
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<author><name sortKey="Mazur, Yu I" uniqKey="Mazur Y">Yu I. Mazur</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Physics Department, University of Arkansas</s1>
<s2>Fayetteville, AR 72701</s2>
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<wicri:noRegion>Fayetteville, AR 72701</wicri:noRegion>
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<author><name sortKey="Tarasov, G G" uniqKey="Tarasov G">G. G. Tarasov</name>
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<author><name sortKey="Salamo, G J" uniqKey="Salamo G">G. J. Salamo</name>
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<author><name sortKey="Huffaker, D L" uniqKey="Huffaker D">D. L. Huffaker</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>California NanoSystems Institute and Electrical Engineering Department, University of California at Los Angeles</s1>
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<term>Chemical modification</term>
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<term>III-V semiconductors</term>
<term>Indium arsenides</term>
<term>Nanostructured materials</term>
<term>Passivation</term>
<term>Photoluminescence</term>
<term>Quantum dots</term>
<term>Rate equation</term>
<term>Sensors</term>
<term>Surface layers</term>
<term>Surface states</term>
<term>Surface treatments</term>
<term>Time resolution</term>
<term>Time resolved spectra</term>
<term>Tunnel effect</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Passivation</term>
<term>Arséniure d'indium</term>
<term>Semiconducteur III-V</term>
<term>Composé III-V</term>
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<term>Nanomatériau</term>
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<term>Couche enterrée</term>
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<term>Résolution temporelle</term>
<term>Spectre résolution temporelle</term>
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<term>Etat surface</term>
<term>Traitement surface</term>
<term>Modification chimique</term>
<term>Equation vitesse</term>
<term>Capteur</term>
<term>InAs</term>
<term>8107T</term>
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<front><div type="abstract" xml:lang="en">We report on an InAs quantum dot (QD) hybrid structure with a top surface QD layer coupled to two buried QD layers that is highly sensitive to surface passivation. After 180 min of passivation, the photoluminescence (PL) peak of the surface QDs shifts from 1545 to 1275 nm while its intensity decreases by one order of magnitude. Time-resolved PL reveals a significant decrease of carrier tunneling between the QD layers because of the surface state modification by chemical treatment. A simple model with rate equations is used to explain the observed optical performance. Our results show that the optical performance of this hybrid structure is very sensitive to the surface environment, making it a potential candidate for sensing applications.</div>
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<fC01 i1="01" l="ENG"><s0>We report on an InAs quantum dot (QD) hybrid structure with a top surface QD layer coupled to two buried QD layers that is highly sensitive to surface passivation. After 180 min of passivation, the photoluminescence (PL) peak of the surface QDs shifts from 1545 to 1275 nm while its intensity decreases by one order of magnitude. Time-resolved PL reveals a significant decrease of carrier tunneling between the QD layers because of the surface state modification by chemical treatment. A simple model with rate equations is used to explain the observed optical performance. Our results show that the optical performance of this hybrid structure is very sensitive to the surface environment, making it a potential candidate for sensing applications.</s0>
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Strong passivation effects on the properties of an InAs surface quantum dot hybrid structure

Strong passivation effects on the properties of an InAs surface quantum dot hybrid structure

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri